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| DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BZV55 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 21 Philips Semiconductors Product specification Voltage regulator diodes FEATURES * Total power dissipation: max. 500 mW * Two tolerance series: 2% and approx. 5% * Working voltage range: nom. 2.4 to 75 V (E24 range) * Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS * Low-power voltage stabilizers or voltage references. The cathode is indicated by a yellow band. handbook, 4 columns BZV55 series DESCRIPTION Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The diodes are available in the normalized E24 2% (BZV55-B) and approx. 5% (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. k a MAM215 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on a ceramic substrate of 10 x 10 x 0.6 mm. PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 s; square wave; Tj = 25 C prior to surge Tamb 50 C; note 1 tie-point 50 C; note 1 tp = 100 s; square wave; Tj = 25 C prior to surge; see Fig.3 CONDITIONS MIN. - MAX. 250 UNIT mA see Tables 1 and 2 - - - -65 -65 400 500 40 +200 +200 mW mW W C C 1999 May 21 2 Philips Semiconductors Product specification Voltage regulator diodes ELECTRICAL CHARACTERISTICS Total BZV55-B and C series Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZV55-B/C2V4 BZV55-B/C2V7 BZV55-B/C3V0 BZV55-B/C3V3 BZV55-B/C3V6 BZV55-B/C3V9 BZV55-B/C4V3 BZV55-B/C4V7 BZV55-B/C5V1 BZV55-B/C5V6 BZV55-B/C6V2 BZV55-B/C6V8 BZV55-B/C7V5 BZV55-B/C8V2 BZV55-B/C9V1 BZV55-B/C10 BZV55-B/C11 BZV55-B/C12 BZV55-B/C13 BZV55-B/C15 to 75 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZnom 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 CONDITIONS IF = 10 mA; see Fig.4 BZV55 series MAX. 0.9 UNIT V A A A A A A A A A A A A A nA nA nA nA nA nA nA 1999 May 21 3 1999 May 21 4 Philips Semiconductors Table 1 Per type BZV55-B/C2V4 to B/C24 Tj = 25 C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 5 mA Tol. 2% (B) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.80 11.80 12.70 14.70 15.70 17.60 19.60 21.60 23.50 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.20 12.20 13.30 15.30 16.30 18.40 20.40 22.40 24.50 Tol. approx. 5% (C) MIN. 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 DIFFERENTIAL RESISTANCE rdif () at IZtest = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 30 40 40 50 50 50 50 50 50 50 60 60 60 MAX. 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 at IZtest = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 10 10 15 20 25 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 MIN. -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -2.7 -2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 TYP. -1.6 -2.0 -2.1 -2.4 -2.4 -2.5 -2.5 -1.4 -0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 16.4 18.4 20.4 MAX. 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 5 and 6) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 s; Tamb = 25 C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 Voltage regulator diodes BZV55-B or C XXX MAX. 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 BZV55 series Product specification 1999 May 21 5 Philips Semiconductors Table 2 Per type BZV55-B/C27 to B/C75 Tj = 25 C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 2 mA Tol. 2% (B) MIN. 27 30 33 36 39 43 47 51 56 62 68 75 26.50 29.40 32.30 35.30 38.20 42.10 46.10 50.00 54.90 60.80 66.60 73.50 MAX. 27.50 30.60 33.70 36.70 39.80 43.90 47.90 52.00 57.10 63.20 69.40 76.50 Tol. approx. 5% (C) MIN. 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 DIFFERENTIAL RESISTANCE rdif () at IZtest = 0.5 mA TYP. 65 70 75 80 80 85 85 90 100 120 150 170 MAX. 300 300 325 350 350 375 375 400 425 450 475 500 at IZtest = 2 mA TYP. 25 30 35 35 40 45 50 60 70 80 90 95 MAX. 80 80 80 90 130 150 170 180 200 215 240 255 MIN. 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 TYP. 23.4 26.6 29.7 33.0 36.4 41.2 46.1 51.0 57.0 64.4 71.7 80.2 MAX. 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 5 and 6) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 s; Tamb = 25 C MAX. 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 Voltage regulator diodes BZV55-B or C XXX MAX. 50 50 45 45 45 40 40 40 40 35 35 35 BZV55 series Product specification Philips Semiconductors Product specification Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a ceramic substrate of 10 x 10 x 0.6 mm. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient see Fig.2 and note 1 CONDITIONS BZV55 series VALUE 300 380 UNIT K/W K/W 103 handbook, full pagewidth Rth j-a (K/W) =1 0.75 0.50 0.33 0.20 0.10 0.05 MBG930 102 10 0.02 0.01 0.001 tp T tp T = 1 10-1 1 10 102 103 104 tp (ms) 105 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 1999 May 21 6 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series 103 handbook, halfpage PZSM (W) 102 MBG801 MBG781 handbook, halfpage 300 IF (mA) 200 (1) 10 (2) 100 1 10-1 1 duration (ms) 10 0 0.6 0.8 VF (V) 1.0 (1) Tj = 25 C (prior to surge). (2) Tj = 150 C (prior to surge). Tj = 25 C. Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.4 Forward current as a function of forward voltage; typical values. MBG783 MBG782 handbook, halfpage 0 handbook, halfpage 10 12 SZ (mV/K) -1 4V3 SZ (mV/K) 5 11 10 9V1 8V2 7V5 6V8 3V9 3V6 6V2 5V6 5V1 4V7 -2 3V3 3V0 2V4 2V7 0 -3 0 20 40 IZ (mA) 60 -5 0 4 8 12 16 IZ (mA) 20 BZV55-B/C2V4 to B/C4V3. Tj = 25 to 150 C. BZV55-B/C4V7 to B/C12. Tj = 25 to 150 C. Fig.5 Temperature coefficient as a function of working current; typical values. Fig.6 Temperature coefficient as a function of working current; typical values. 1999 May 21 7 Philips Semiconductors Product specification Voltage regulator diodes PACKAGE OUTLINE Hermetically sealed glass surface mounted package; 2 connectors BZV55 series SOD80C k (1) a D L H L DIMENSIONS (mm are the original dimensions) 0 UNIT mm D 1.60 1.45 H 3.7 3.3 L 0.3 1 scale 2 mm Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD80C REFERENCES IEC 100H01 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1999 May 21 8 Philips Semiconductors Product specification Voltage regulator diodes NOTES BZV55 series 1999 May 21 9 Philips Semiconductors Product specification Voltage regulator diodes NOTES BZV55 series 1999 May 21 10 Philips Semiconductors Product specification Voltage regulator diodes NOTES BZV55 series 1999 May 21 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. 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Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999 Internet: http://www.semiconductors.philips.com SCA 64 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/02/pp12 Date of release: 1999 May 21 Document order number: 9397 750 05884 |
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